Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Nature Communications

Home Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Xiaowei Wang, Chao Zhu, Ya Deng, Ruihuan Duan, Jieqiong Chen, Qingsheng Zeng, Jiadong Zhou, Qundong Fu, Lu You, Song Liu, James H. Edgar, Peng Yu, Zheng Liu

https://doi.org/10.1038/s41467-021-23392-6, Volume: 12

Article Type: Correction Article History

Publisher: Nature Publishing Group UK

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Keywords

Electronic devices, Two-dimensional materials, Information storage

Wang,Zhu,Deng,Duan,Chen,Zeng,Zhou,Fu,You,Liu,Edgar,Yu,and Liu: Author Correction: Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Correction to: Nature Communications 10.1038/s41467-021-21320-2, published online 17 February 2021.

The original version of this Article contained an error in the Acknowledgements:

NRF-CRP22-2019-0060 should have read NRF-CRP22-2019-0007.

This has now been corrected in both the PDF and HTML versions of the Article.