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Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

Article Type: correction Article History
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Zhi,Zhou,Zhang,Reiser,and Huang: Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

Correction to: Nature Communications 10.1038/s41467-020-20352-4, published online 19 January 2021.

Correction 1: Figure panels 3g and 3h in the original version of this article were inadvertently reversed. Correct Fig. 3 with the updated panels is listed below:

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Fig. 3

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Correction 2: The sentence “we further assessed its eligibility for practical applications, starting with their stability in aged conditions (Fig. 5d–f)” inadvertently omitted some information,the correct sentence should be: “we further assessed its eligibility for practical applications, starting with their stability in cycled (0-15000 cycles) and aged (0-200 hours) conditions (Fig. 5d-f).”

Correction 3: The aging condition for MTB-4, MZB-4, and MIB-3 based TFSCs was incorrectly stated as “200 hours”. The correct aging time is “300 hours”. Corresponding sentence should have read “Even after 300 h of aging, MTB-4, MZB-4, and MIB-3 based TFSCs still preserve capacitance retention of 91.4%, 88.6%, and 87.7% at 1.2 V, respectively.”

The error has not been corrected in the PDF or HTML versions of the Article.